FMV12N60ES Datasheet (Fuji Electric) - N-CHANNEL SILICON POWER MOSFET

FMV12N60ES, N-CHANNEL SILICON POWER MOSFET

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Ope

FMV12N60ES Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF