Datasheet4U Logo Datasheet4U.com

FMV12N60ES

N-CHANNEL SILICON POWER MOSFET

FMV12N60ES Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

FMV12N60ES General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Ope.

FMV12N60ES Datasheet (635.79 KB)

Preview of FMV12N60ES PDF

Datasheet Details

Part number:

FMV12N60ES

Manufacturer:

Fuji Electric

File Size:

635.79 KB

Description:

N-channel silicon power mosfet.

📁 Related Datasheet

FMV12N50E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMV12N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.

FMV12N50E - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMV12N50E ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high mutation rugg.

FMV12N50ES - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMV12N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla.

FMV10N60E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMV10N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.

FMV10N80E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr http://.fujisemi. FMV10N80E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) charact.

FMV11N60E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMV11N60E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.

FMV11N60E - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMV11N60E ·FEATURES ·With TO-220F packaging ·Maintains both low power loss andlow noise ·Very.

FMV11N90E - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.DataSheet.co.kr FMV11N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllabl.

TAGS

FMV12N60ES N-CHANNEL SILICON POWER MOSFET Fuji Electric

Image Gallery

FMV12N60ES Datasheet Preview Page 2 FMV12N60ES Datasheet Preview Page 3

FMV12N60ES Distributor