FMV12N50ES - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMV12N50ES Datasheet Preview — Preview of FMV12N50ES PDF

Datasheet Details

Part number	FMV12N50ES
Manufacturer	Fuji ↗ Electric
File Size	596.67 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMV12N50ES_FujiElectric.pdf

FMV12N50ES Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 500 500 ±12 ±48 ±30 12 460.8 6.5 6.3 100 2.16 65 150 -5

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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Published: Mar 7, 2012 |