FMV10N80E - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMV10N80E Datasheet Preview — Preview of FMV10N80E PDF

Datasheet Details

Part number	FMV10N80E
Manufacturer	Fuji ↗ Electric
File Size	501.30 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMV10N80E_FujiElectric.pdf

FMV10N80E Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 800 800 ±10 ±40 ±30 10 572.4 8.5 2.1 100 2.16 85 150 -55 to + 150 Unit V V A A V

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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Published: Mar 7, 2012 |