FMV11N90E - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

FMV11N90E Datasheet Preview — Preview of FMV11N90E PDF

Datasheet Details

Part number	FMV11N90E
Manufacturer	Fuji ↗ Electric
File Size	564.11 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMV11N90E_FujiElectric.pdf

FMV11N90E Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 900 900 ±11 ±44 ±30 11 811.9 12 2.2 100 2.16 120 150 -55 to + 150 Unit V V A A

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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Published: Mar 7, 2012 |