* Power supply voltage of 2.7 to 3.6 V
* High performance 100 ns maximum access time
* Operating Temperature
* 20 to +85°C
* FLASH MEMORY
* Simultaneous operations Read-while Erase or Read-while-Program
* Minimum 100,000 write/erase cycles
MB84VD2009 Datasheet (424.71 KB)
MB84VD2009
Fujitsu Media Devices
424.71 KB
(mb84vd2008 / mb84vd2009) 8m (x 16) flash memory & 2m (x 16) static ram.
( DataSheet : www.DataSheet4U.com )
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50111-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
8M (× 16) FLA.
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