* 1 M word × 64 bit × 4 banks organization
* DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)
* Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.95 V
* Junction Temperature: TJ =
MB81EDS256445 Datasheet (442.52 KB)
MB81EDS256445
Fujitsu
442.52 KB
256m bit (4 bank x 1m word x 64 bit).
FUJITSU MICROELECTRONICS DATA SHEET
DS05-11456-1E
MEMORY Consumer FCRAMTM
CMOS
256M Bit (4 bank x 1M word x 64 bit)
Consumer Applications Specific .
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