* 2 M word × 64 bit × 4 banks organization
* DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)
* Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V
* Junction Temperature: TJ =
MB81EDS516445 Datasheet (449.05 KB)
MB81EDS516445
Fujitsu
449.05 KB
512m bit (4 bank x 2m word x 64 bit).
FUJITSU MICROELECTRONICS DATA SHEET
DS05-11464-1E
MEMORY Consumer FCRAMTM
CMOS
512M Bit (4 bank x 2M word x 64 bit)
Consumer Applications Specific .
📁 Related Datasheet
MB81EDS516545 512M Bit (4 bank x 2M word x 64 bit) (Fujitsu)
MB81EDS256445 256M Bit (4 bank x 1M word x 64 bit) (Fujitsu)
MB81ES171625 SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory (Fujitsu Media Devices Limited)
MB81ES653225 Consumer/Embedded Application Specific Memory (Fujitsu Media Devices Limited)
MB81 Single Phase Bridge Rectifier (Micro Commercial Components)
MB810 Single Phase Bridge Rectifier (Micro Commercial Components)
MB811643242A 2 x 512K x 32-Bit SDRAM (Fujitsu)
MB8116E MOS DRAM (Fujitsu)
MB8116H MOS DRAM (Fujitsu)
MB8116NC MOS DRAM (Fujitsu)
