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MB81EDS516545

512M Bit (4 bank x 2M word x 64 bit)

MB81EDS516545 Features

* 2 M word × 64 bit × 4 banks organization

* DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)

* Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V

* Junction Temperature: TJ =

MB81EDS516545 General Description

The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM
*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536, 870, 912 storages accessible in a 64-bit format. MB81EDS516545 is suited for consumer application requiring high data band width with low power con.

MB81EDS516545 Datasheet (487.78 KB)

Preview of MB81EDS516545 PDF

Datasheet Details

Part number:

MB81EDS516545

Manufacturer:

Fujitsu

File Size:

487.78 KB

Description:

512m bit (4 bank x 2m word x 64 bit).
FUJITSU MICROELECTRONICS DATA SHEET DS05-11463-1E MEMORY Consumer FCRAMTM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific .

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TAGS

MB81EDS516545 512M Bit bank word bit Fujitsu

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