MB84VD2118xA - (MB84VD2118xA / MB84VD2119xA) 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program * Minimum 100,000 write/erase cycles * Sector erase architecture Eight 4 K words and thirty
MB84VD2118xA Features
* Power supply voltage of 2.7 V to 3.6 V
* High performance 85 ns maximum access time
* Operating Temperature
* 25 °C to +85 °C
* Package 69-ball FBGA, 56-pin TSOP(I) (Continued) s PRODUCT LINE UP Flash Memory Ordering Part No. VCCf
* , VCCs
* = 3.0 V +0
