* 100°C maximum limits specified for:
* Switching times
* Saturation voltages
* Leakage currents
* RBSOA (VCEX = 350 to 450V) at rated IC continuous.
2N6678
GE
441.26 KB
Npn power transistors.
HIGH VOLTAGE/HIGH SPEED
NPN POWER TRANSISTORS
GE EQUIVALENT D64VS3, 4, 5
2N6676,77,78
300-400 VOLTS 15 AMP, 175 WATTS
The 2N6676, 2N6677 and 2N6678 .
📁 Related Datasheet
2N6671 - HIGH VOLTAGE NPN TRANSISTOR
(ETC)
.
2N6671 - (2N6671 - 2N6673) Silicon Power Transistor
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·Low saturation voltag.
2N6671 - Bipolar NPN Device
(Seme LAB)
2N6671
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N6672 - HIGH VOLTAGE NPN TRANSISTOR
(ETC)
.
2N6672 - (2N6671 - 2N6673) Silicon Power Transistor
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·Low saturation voltag.
2N6672 - Bipolar NPN Device
(Seme LAB)
2N6672
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N6673 - Bipolar NPN Device
(Seme LAB)
2N6673
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
