Datasheet Details
- Part number
- 2N6676
- Manufacturer
- GE
- File Size
- 441.26 KB
- Datasheet
-
2N6676-GE.pdf
- Description
-
NPN POWER TRANSISTORS
2N6676 Product details
Features
- 100°C maximum limits specified for:.
- Switching times.
- Saturation voltages.
- Leakage currents.
- RBSOA (VCEX = 350 to 450V) at rated IC continuous.
2N6676 Stock/Price
📁 Similar Datasheet
- 2N6671 - HIGH VOLTAGE NPN TRANSISTOR (ETC)
- 2N6672 - HIGH VOLTAGE NPN TRANSISTOR (ETC)
- 2N6673 - Bipolar NPN Device (Seme LAB)
- 2N6674 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
- 2N6675 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
- 2N6679 - General Purpose Transistors (Hewlett-Packard)
- 2N6603 - HIGH FREQUENCY TRANSISTOR (Motorola)
- 2N6604 - HIGH FREQUENCY TRANSISTOR (Motorola)
GE 2N6676-like datasheet
- 2N6677 - NPN POWER TRANSISTORS
- 2N6678 - NPN POWER TRANSISTORS
- 2N6292 - NPN POWER TRANSISTORS
- 2N6487 - NPN POWER TRANSISTORS
- 2N6496 - SILICON N-P-N PLANAR TRANSISTORS
- 2N6714 - NPN POWER TRANSISTORS
