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D64DV6
GE
609.58 KB
Npn power darlington transistors.
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64DV5,6,7 D64EV5,6,7
400-500 VOLTS 50 AMP, 180 WATTS
These devices are designed for use in high-speed s.
📁 Related Datasheet
D64DV5 - NPN POWER DARLINGTON TRANSISTORS
(GE)
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64DV5,6,7 D64EV5,6,7
400-500 VOLTS 50 AMP, 180 WATTS
These devices are designed for use in high-speed s.
D64DV7 - NPN POWER DARLINGTON TRANSISTORS
(GE)
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64DV5,6,7 D64EV5,6,7
400-500 VOLTS 50 AMP, 180 WATTS
These devices are designed for use in high-speed s.
D64DS5 - NPN POWER DARLINGTON TRANSISTORS
(GE)
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64D85,6,7 D64ESS,6,7
400-500 VOLTS 20 AMP, 125 WATTS
These devices are designed for use in high-speed s.
D64DS6 - NPN POWER DARLINGTON TRANSISTORS
(GE)
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64D85,6,7 D64ESS,6,7
400-500 VOLTS 20 AMP, 125 WATTS
These devices are designed for use in high-speed s.
D64DS7 - NPN POWER DARLINGTON TRANSISTORS
(GE)
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64D85,6,7 D64ESS,6,7
400-500 VOLTS 20 AMP, 125 WATTS
These devices are designed for use in high-speed s.
D64082 - THREE-DIMENSIONAL Y/C SEPARATION LSI
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD64082
THREE-DIMENSIONAL Y/C SEPARATION LSI
DESCRIPTION The µPD64082 realizes a high precision Y/C separation and.
D64084 - UPD64084
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD64084
THREE-DIMENSIONAL Y/C SEPARATION LSI WITH ON-CHIP MEMORY
DESCRIPTION
The µPD64084 realizes a high precis.
D6450 - UPD6450
(NEC)
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