D64084
NEC
458.97kb
Upd64084. The µPD64084 realizes a high precision Y/C separation by the three-dimension signal processing for NTSC signal. This product has the
TAGS
📁 Related Datasheet
D64082 - THREE-DIMENSIONAL Y/C SEPARATION LSI
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD64082
THREE-DIMENSIONAL Y/C SEPARATION LSI
DESCRIPTION The µPD64082 realizes a high precision Y/C separation and.
D6450 - UPD6450
(NEC)
..
..
..
..
..
..
..
.
D6453GT - UPD6453GT
(NEC)
..
..
..
..
..
..
..
.
D6461 - CMOS LSI CHIP
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD6461, 6462
CMOS LSI CHIP FOR CAMCORDER ON-SCREEN CHARACTER DISPLAY (12 ROWS × 24 COLUMNS)
The µPD6461, 6462 are .
D6467 - ON-SCREEN CHARACTER DISPLAY CMOS IC
(NEC)
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD6467
ON-SCREEN CHARACTER DISPLAY CMOS IC FOR 512-CHARACTER, 12-ROW, 28-COLUMN, CAMERA-CONTAINED VCR
The µPD646.
D647A - 2SD647A
(Toshiba)
:
2S0647A
2SD697Ai
SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS. M.
D649 - 2SD649
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD649
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·H.
D64DS5 - NPN POWER DARLINGTON TRANSISTORS
(GE)
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64D85,6,7 D64ESS,6,7
400-500 VOLTS 20 AMP, 125 WATTS
These devices are designed for use in high-speed s.
D64DS6 - NPN POWER DARLINGTON TRANSISTORS
(GE)
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64D85,6,7 D64ESS,6,7
400-500 VOLTS 20 AMP, 125 WATTS
These devices are designed for use in high-speed s.
D64DS7 - NPN POWER DARLINGTON TRANSISTORS
(GE)
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D64D85,6,7 D64ESS,6,7
400-500 VOLTS 20 AMP, 125 WATTS
These devices are designed for use in high-speed s.
