D86ER1, D86ER2 Datasheet - GE

D86ER1 FIELD EFFECT POWER TRANSISTOR

~D~I?~ FIELD EFFECT POWER TRANSISTOR IRF440,441 D86ER2,R1 SAMPERES 500, 450 VOLTS ROS(ON) = 0.S5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area w.

D86ER1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D86ER2-GE.pdf

D86ER1 Datasheet Preview — This datasheet PDF includes multiple part numbers: D86ER1, D86ER2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

D86ER1, D86ER2

Manufacturer:

File Size:

192.01 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: D86ER1, D86ER2.
Please refer to the document for exact specifications by model.

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D86ER1 D86ER2 FIELD EFFECT POWER TRANSISTOR GE

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