* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86EQ1
GE
201.15 KB
Field effect power transistor.
~ffi1D~ [P~lF
FIELD EFFECT POWER TRANSISTOR
IRF340,341 D86EQ2,Q1
10 AMPERES 400, 350 VOLTS
ROS(ON) =0.55 n
This series of N-Channel Enhancement-mode.
📁 Related Datasheet
D86EQ2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~ffi1D~ [P~lF
FIELD EFFECT POWER TRANSISTOR
IRF340,341 D86EQ2,Q1
10 AMPERES 400, 350 VOLTS
ROS(ON) =0.55 n
This series of N-Channel Enhancement-mode.
D86EK2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~ffi1D~~
FIELD EFFECT POWER TRANSISTOR
IRF140,141 D86EL2,K2
27 AMPERES 100,60 VOLTS
ROS(ON) = 0.085 n
This series of N-Channel Enhancement-mode Powe.
D86EL2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~ffi1D~~
FIELD EFFECT POWER TRANSISTOR
IRF140,141 D86EL2,K2
27 AMPERES 100,60 VOLTS
ROS(ON) = 0.085 n
This series of N-Channel Enhancement-mode Powe.
D86EM2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRF2409241 D86EN2,M2
18 AMPERES 200,150 VOLTS
RDS(ON) =0.18 .0.
This series of N-Channel Enhancement-mode Power.
D86EN2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRF2409241 D86EN2,M2
18 AMPERES 200,150 VOLTS
RDS(ON) =0.18 .0.
This series of N-Channel Enhancement-mode Power.
D86ER1 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~I?~
FIELD EFFECT POWER TRANSISTOR
IRF440,441 D86ER2,R1
SAMPERES 500, 450 VOLTS ROS(ON) = 0.S5 il
This series of N-Channel Enhancement-mode Power .
D86ER2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~I?~
FIELD EFFECT POWER TRANSISTOR
IRF440,441 D86ER2,R1
SAMPERES 500, 450 VOLTS ROS(ON) = 0.S5 il
This series of N-Channel Enhancement-mode Power .
D862 - 2SD862
(Wing Shing Computer Components)
2SD862
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelo.
