D86EQ1 Datasheet - GE

D86EQ1 FIELD EFFECT POWER TRANSISTOR

~ffi1D~ [P~lF FIELD EFFECT POWER TRANSISTOR IRF340,341 D86EQ2,Q1 10 AMPERES 400, 350 VOLTS ROS(ON) =0.55 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

D86EQ1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D86EQ1 Datasheet (201.15 KB)

D86EQ1 Datasheet Preview — Preview of D86EQ1 PDF

Datasheet Details

Part number:

D86EQ1

Manufacturer:

File Size:

201.15 KB

Description:

Field effect power transistor.

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D86EQ1 FIELD EFFECT POWER TRANSISTOR GE

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