D86EQ2 Datasheet - GE

~ffi1D~ [P~lF FIELD EFFECT POWER TRANSISTOR IRF340,341 D86EQ2,Q1 10 AMPERES 400, 350 VOLTS ROS(ON) =0.55 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating