D86EM2, D86EN2 Datasheet - GE

D86EM2 FIELD EFFECT POWER TRANSISTOR

~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF2409241 D86EN2,M2 18 AMPERES 200,150 VOLTS RDS(ON) =0.18 .0. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area .

D86EM2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching -Independent of temperature

* Voltage controlled - High transconductance

* Low. input capacitance - Reduced drive requirement

D86EN2-GE.pdf

D86EM2 Datasheet Preview — This datasheet PDF includes multiple part numbers: D86EM2, D86EN2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

D86EM2, D86EN2

Manufacturer:

File Size:

198.35 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: D86EM2, D86EN2.
Please refer to the document for exact specifications by model.

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D86EM2 D86EN2 FIELD EFFECT POWER TRANSISTOR GE

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