D86EN2 Datasheet - GE

D86EN2 FIELD EFFECT POWER TRANSISTOR

~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF2409241 D86EN2,M2 18 AMPERES 200,150 VOLTS RDS(ON) =0.18 .0. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area .

D86EN2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching -Independent of temperature

* Voltage controlled - High transconductance

* Low. input capacitance - Reduced drive requirement

D86EN2-GE.pdf

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Datasheet Details

Part number:

D86EN2

Manufacturer:

File Size:

198.35 KB

Description:

Field effect power transistor.

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