VN10KMA Datasheet (GE) - FIELD EFFECT POWER TRANSISTOR

VN10KMA, FIELD EFFECT POWER TRANSISTOR

~ffi3D~ [F~u FIELD EFFECT POVVER TRANSISTOR VN10KMA 0.5 AMPERES 60 VOLTS RDS(ON) =5.0 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area with good lin

VN10KMA Features

* Directly drives inductive loads

* High speed, high peak current switching

* Inherent current sharing capability when paralleled

* Directly interfaces to CMOS, DTL, TTL logic

* Simple straight-f