* internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL. TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGs=OV,10=100.l1A Vos = VGS, 10 = 1 mA Gate-Body Leakage Zero Ga
VN10KE
Siliconix
99.24 KB
N-channel enhancement-mode mos transistors.
~Siliconix .,1;11 incorporated
VN0610L, VN10KE, VN10KM
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER .
📁 Related Datasheet
VN10K - N-Channel Enhancement-Mode Vertical DMOS FETs
(Supertex Inc)
VN10K N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
Standard Commercial Devices
BVDSS / BVDGS 60V RDS(ON) (max) 5.0Ω ID(ON) (min).
VN10K - N-Channel Vertical DMOS FET
(Microchip)
VN10K
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Lo.
VN10K - N-Channel MOSFET
(TT)
N-CHANNEL ENHANCEMENT MODE MOSFET
VN10K
• Low RDS(on), VGS(th), CISS And Fast Switching Speeds
• Hermetic TO-18 Metal package.
• Ideally Suited For P.
VN10K-TO18 - N-Channel MOSFET
(Seme LAB)
..
VN10K-TO18
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
N–CHANNEL ENHANCEMENT .
VN10KE - N-Channel Enhancement-Mode MOS Transistors
(Vishay Telefunken)
.
VN10KM - N-Channel Enhancement-Mode MOS Transistors
(Siliconix)
~Siliconix .,1;11 incorporated
VN0610L, VN10KE, VN10KM
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER .
VN10KM - N-Channel Enhancement-Mode MOS Transistors
(Vishay Telefunken)
.
VN10KMA - FIELD EFFECT POWER TRANSISTOR
(GE)
~ffi3D~ [F~u
FIELD EFFECT POVVER TRANSISTOR
VN10KMA
0.5 AMPERES 60 VOLTS
RDS(ON) =5.0 0
This series of N-Channel Enhancement-mode Power MOSFETs util.
