VN10KN3 - N-Channel Enhancement-Mode Vertical DMOS FETs

Supertex Inc

Datasheet Details

Part number	VN10KN3
Manufacturer	Supertex Inc
File Size	454.61 KB
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet	VN10KN3_SupertexInc.pdf

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabiliti.

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Published: Apr 16, 2005 |