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VN10KN3 N-Channel Enhancement-Mode Vertical DMOS FETs

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Description

VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS / BVDGS 60V RDS(ON) (max) 5.0Ω ID(ON) (min).

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Datasheet Specifications

Part number
VN10KN3
Manufacturer
Supertex Inc
File Size
454.61 KB
Datasheet
VN10KN3_SupertexInc.pdf
Description
N-Channel Enhancement-Mode Vertical DMOS FETs

Features

* ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhanceme

Applications

* where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. )

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