* internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL. TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGs=OV,10=100.l1A Vos = VGS, 10 = 1 mA Gate-Body Leakage Zero Ga
VN10KM
Siliconix
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N-channel enhancement-mode mos transistors.
~Siliconix .,1;11 incorporated
VN0610L, VN10KE, VN10KM
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER .
📁 Related Datasheet
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