2302 Datasheet, mosfet equivalent, GFD

2302 Features

  • Mosfet
  • VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • S

PDF File Details

Part number:

2302

Manufacturer:

GFD

File Size:

621.15kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5

Datasheet Preview: 2302 📥 Download PDF (621.15kb)
Page 2 of 2302 Page 3 of 2302

TAGS

2302
N-Channel
Enhancement
Mode
Power
MOSFET
GFD

📁 Related Datasheet

230-JC6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
A tognum Group Brand DIESEL ENGINE-GENERATOR SET 230-JC6DT3 230 ekW  60 Hz  Standby /  /  195 ekW / 60 Hz / Prime 208 - 600V System Ratings Stand.

230-JS6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
A tognum Group Brand Diesel Engine-Generator Set 230-JS6DT3 230 ekW  60 Hz  Standby /  /  208 - 600V System Ratings Standby Voltage (L-L) Phase .

2300 - 100 pin Strip Header (3M)
.

2300F - N-Channel MOSFET (GOFORD)
GOFORD 2300F Description The 2300F designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and.

2301 - P-Channel Enhancement Mode Power MOSFET (GFD)
GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.

2301-RC - High Current Toroid Inductors (Bourns)
†RoHS COMPLIANT High Current Toroid Inductors Special Features • DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.

2301H - N-Channel MOSFET (GOFORD)
GOFORD DESCRIPTION The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as.

2302 - Class C Microwave (ETC)
2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF.

2302 - N-Channel MOSFET (ETC)
SOT-23-3 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHB MAXIMUM RATINGS (TA=25℃ unless otherwi.

2302-RC - High Current Toroid Inductors (Bourns)
†RoHS COMPLIANT High Current Toroid Inductors Special Features • DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts