2301H Datasheet, Mosfet, GOFORD

2301H Features

  • Mosfet
  • VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 105mΩ 65mΩ -2 A
  • High Power and current handing capability
  • RoHS Compliant
  • Surface Mo

PDF File Details

Part number:

2301H

Manufacturer:

GOFORD

File Size:

2.35MB

Download:

📄 Datasheet

Description:

N-channel mosfet. The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

Datasheet Preview: 2301H 📥 Download PDF (2.35MB)
Page 2 of 2301H Page 3 of 2301H

2301H Application

  • Applications GENERAL FEATURES
  • VDSS RDS(ON) RDS(ON) ID @ -4.5V(Typ) @ -10V(Typ) -30V 105mΩ 65mΩ -2 A
  • High Power and cur

TAGS

2301H
N-Channel
MOSFET
GOFORD

📁 Related Datasheet

2301 - P-Channel Enhancement Mode Power MOSFET (GFD)
GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.

2301-RC - High Current Toroid Inductors (Bourns)
†RoHS COMPLIANT High Current Toroid Inductors Special Features • DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.

230-JC6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
A tognum Group Brand DIESEL ENGINE-GENERATOR SET 230-JC6DT3 230 ekW  60 Hz  Standby /  /  195 ekW / 60 Hz / Prime 208 - 600V System Ratings Stand.

230-JS6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
A tognum Group Brand Diesel Engine-Generator Set 230-JS6DT3 230 ekW  60 Hz  Standby /  /  208 - 600V System Ratings Standby Voltage (L-L) Phase .

2300 - 100 pin Strip Header (3M)
.

2300F - N-Channel MOSFET (GOFORD)
GOFORD 2300F Description The 2300F designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and.

2302 - Class C Microwave (ETC)
2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF.

2302 - N-Channel MOSFET (ETC)
SOT-23-3 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHB MAXIMUM RATINGS (TA=25℃ unless otherwi.

2302 - N-Channel Enhancement Mode Power MOSFET (GFD)
2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and o.

2302-RC - High Current Toroid Inductors (Bourns)
†RoHS COMPLIANT High Current Toroid Inductors Special Features • DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.

Stock and price

part
Goford Semiconductor
P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
DigiKey
2301H
2771 In Stock
Qty : 1000 units
Unit Price : $0.06
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts