� VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V
� High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty a.
.
50N03
VDS
30V
RDS(ON)
--
ID
50A
GENERAL FEATURES
� VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V
� High den.
The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications .
50N03
VDS
30V
RDS(ON)
--
ID
50A
GENERAL FEATURES
� VDS = 30 V, ID = 50 A RDS(ON) < 6.5 m.
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