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50N03 MOSFET

50N03 Description

.
The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

50N03 Features

* VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process technology for

50N03 Applications

* . 50N03 VDS 30V RDS(ON)

📥 Download Datasheet

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Datasheet Details

Part number
50N03
Manufacturer
GFO
File Size
1.06 MB
Datasheet
50N03-GFO.pdf
Description
MOSFET

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