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50N03 - MOSFET

General Description

The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

Key Features

  • VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stabilty and unifomity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability TO-252-2L top view.

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Datasheet Details

Part number 50N03
Manufacturer GFO
File Size 1.06 MB
Description MOSFET
Datasheet download datasheet 50N03 Datasheet

Full PDF Text Transcription for 50N03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 50N03. For precise diagrams, and layout, please refer to the original PDF.

DESCRIPTION The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 5...

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Low gate charge . It can be used in a wide Vanety of applications . 50N03 VDS 30V RDS(ON) -- ID 50A GENERAL FEATURES � VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability TO-252-2L top view Application � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 50N03 TO-252-2L OGFD www.goford.