50N03 Datasheet - GFO

50N03, MOSFET

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The 50N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

Features

* VDS = 30 V, ID = 50 A RDS(ON) < 6.5 mΩ @ VGS = 10 V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process technology for

Applications

* . 50N03 VDS 30V RDS(ON)

50N03-GFO.pdf