2N7002W N-Channel Power Mosfet

GME

Description

Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W .

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Datasheet Specifications

Part number: 2N7002W
Manufacturer: GME
File Size: 237.86 KB
Datasheet: 2N7002W-GME.pdf
Description: N-Channel Power Mosfet

Features

* Low On-Resistance。
* Low Gate Threshold Voltage.
* Low Input Capacitance.
* Fast Switching Speed.

Applications

* N-channel enhancement mode effect transistor.
* Switching application. ORDERING INFORMATION Type No. Marking 2N7002W 7002 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 60 VDGR VGSS ID PD Drain

2N7002W Distributors

📁 Related Datasheet

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2N7002-HF - MOSFET (Comchip)
2N7002A - N-channel FET (KEC)

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N-Channel Power Mosfet GME

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