2SC3149 Datasheet - GME

2SC3149, NPN Transistor

Production specification NPN Triple Diffused Planar Silicon Transistor .

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2SC3149-GME.pdf

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Datasheet Details

Part number:

2SC3149

Manufacturer:

GME

File Size:

212.42 KB

Description:

NPN Transistor

Features

* High breakdown voltage(VCBO≥900V).
* Fast switching speed. Pb
* Wide ASO. Lead-free 2SC3149 PPLICATIONS

Applications

* TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current 1.5 A ICP Collector Current(Pulse) 5A IB Base

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