Datasheet Details
- Part number
- 2SC3149
- Manufacturer
- GME
- File Size
- 212.42 KB
- Datasheet
- 2SC3149-GME.pdf
- Description
- NPN Transistor
2SC3149 Description
Production specification NPN Triple Diffused Planar Silicon Transistor .
2SC3149 Features
* High breakdown voltage(VCBO≥900V).
* Fast switching speed. Pb
* Wide ASO. Lead-free
2SC3149
PPLICATIONS
2SC3149 Applications
* TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
900 V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current
1.5 A
ICP Collector Current(Pulse)
5A
IB Base
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