Datasheet Specifications
- Part number
- 2SC3149
- Manufacturer
- GME
- File Size
- 212.42 KB
- Datasheet
- 2SC3149-GME.pdf
- Description
- NPN Transistor
Description
Production specification NPN Triple Diffused Planar Silicon Transistor .
Features
* High breakdown voltage(VCBO≥900V).Applications
* TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current 1.5 A ICP Collector Current(Pulse) 5A IB Base2SC3149 Distributors
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