* Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim.
* High breakdown voltage (VCEO≥160V).
* Small output capacitance. Package Dimensions unit:mm 2018B [2SA1257/2SC3143] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 0.8 1.1
2SC3143
Sanyo Semicon Device
38.63 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:ENN1057C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1257/2SC3143
High-Voltage Switching, AF Power Amp, 100W Output Predriver App.
📁 Related Datasheet
2SC3142 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN1066A
NPN Epitaxial Planar Silicon Transistor
2SC3142
High-Frequency General-Purpose Amplifier Applications
Features
· FBET series.
2SC3142 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
.
2SC3142 - NPN Transistors
(Kexin)
SMD Type
Transistors
NPN Transistors 2SC3142
■ Features
● Collector Current Capability IC=30mA ● Collector Emitter Voltage VCEO=20V
+0.22.8 -0.1
S.
2SC3143 - NPN Epitaxial Planar Silicon Transistor
(Kexin)
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC3143
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
High breakdown voltage.
2SC3144 - PNP/NPN Transistors
(Sanyo Semicon Device)
Ordering number:ENN1058D
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SA1258/2SC3144
60V/3A for High-Speed Drivers Applications
Features.
2SC3144 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: hFE= 2000(.
2SC3144 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Darlington Power Transistors
DESCRIPTION ·With TO-220C package ·High sw.
2SC3145 - PNP/NPN Transistors
(Sanyo Semicon Device)
Ordering number:ENN1059D
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SA1259/2SC3145
60V/5A for High-Speed Drivers Applications
Features.
