2SC3116 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3116
Manufacturer	Sanyo Semicon Device
File Size	45.39 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3116_SanyoSemiconDevice.pdf

High breakdown voltage.
Large current capacity.
Using MBIT process Package Dimensions unit:mm 2009B [2SA1248/2SC3116] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1248 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP Pc Junction Temperature Storage Tempera.

📁 2SC3116 Similar Datasheet

2SC3110 - Silicon Power Transistor (Inchange)
2SC3112 - TRANSISTOR (Toshiba Semiconductor)
2SC3113 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC3119 - Silicon NPN Transistor (Toshiba)
2SC3101 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3102 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3103 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3104 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |