2SC3110 Silicon Power Transistor

Inchange

Description

INCHANGE Semiconductor www.DataSheet4U.com isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 .
Low Noise. High Gain. High Current-Gain Bandwidth Product APPLICATIONS. Designed for use in RF wide band low noise amplifier.

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Datasheet Specifications

Part number: 2SC3110
Manufacturer: Inchange
File Size: 110.39 KB
Datasheet: 2SC3110_Inchange.pdf
Description: Silicon Power Transistor

Applications

* Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 30 mA ICP Collector Current-

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2SC3110 Silicon Power Transistor Inchange

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