Datasheet Details
Part number:
2SC3112
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
487.09 KB
Description:
Transistor.
2SC3112_ToshibaSemiconductor.pdf
2SC3112_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SC3112
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
487.09 KB
Description:
Transistor.
2SC3112, TRANSISTOR
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperatur
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