2SC3122 Datasheet - Toshiba Semiconductor

2SC3122 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEB.

2SC3122_ToshibaSemiconductor.pdf