2SC3122 Silicon NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm * High gain: Gpe = 24dB (typ.) .

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Datasheet Specifications

Part number: 2SC3122
Manufacturer: Toshiba ↗ Semiconductor
File Size: 140.01 KB
Datasheet: 2SC3122_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Unit: mm
* High gain: Gpe = 24dB (typ. ) (f = 200 MHz)
* Low noise: NF = 2.0dB (typ. ) (f = 200 MHz)
* Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current

2SC3122 Distributors

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2SC3122 Silicon NPN Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SC3122-like datasheet