2SC3122
Toshiba ↗ Semiconductor
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Silicon npn transistor.
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3122
2SC3122
TV VHF RF Amplifier Applications
Unit: mm
* High gain: Gpe = 24dB (typ.) .
📁 Related Datasheet
2SC3120 - Silicon NPN Transistor
(Toshiba Semiconductor)
2SC3120
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3120
TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications
Unit: mm.
2SC3120 - Silicon NPN Transistor
(Kexin)
SMD Type
Silicon NPN Epitaxial 2SC3120
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
+0.1 1.3-0.1
1
+0.1 0.95-0.
2SC3121 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3121
TV Tuner, UHF Oscillator Applications (mon base) TV Tuner, UHF Converter Applications .
2SC3121 - Silicon NPN Transistor
(Kexin)
SMD Type
Silicon NPN Epitaxial 2SC3121
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
High Transition Frequency :fT=1500MHz.
2SC3121 - Silicon NPN RF Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3121
DESCRIPTION ·High Gain Bandwidth Product
fT = 1500 MHz TYP. ·Excellent Linearity ·Minim.
2SC3122 - Silicon NPN Epitaxial Transistor
(Kexin)
SMD Type
Silicon NPN Epitaxial 2SC3122
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
Low .
2SC3122 - Silicon NPN RF Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3122
DESCRIPTION ·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low .
2SC3123 - NPN Transistor
(Toshiba Semiconductor)
2SC3123
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3123
TV VHF Mixer Applications
• • High conversion gain: Gce = 23dB (typ.) Low revers.
