2SC3122 Datasheet - Toshiba Semiconductor

2SC3122 - Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEB.

2SC3122_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC3122

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

140.01 KB

Description:

Silicon npn transistor.

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2SC3122 Silicon NPN Transistor Toshiba Semiconductor