Datasheet Details
- Part number
- 2SC3122
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 140.01 KB
- Datasheet
- 2SC3122_ToshibaSemiconductor.pdf
- Description
- Silicon NPN Transistor
2SC3122 Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm * High gain: Gpe = 24dB (typ.) .
2SC3122 Applications
* Unit: mm
* High gain: Gpe = 24dB (typ. ) (f = 200 MHz)
* Low noise: NF = 2.0dB (typ. ) (f = 200 MHz)
* Excellent forward AGC characteristics
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
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