2SC3114 - PNP/NPN Epitaxial Planar Silicon Transistors
2SC3114 Features
* High VEBO.
* Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter
