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2SC5387 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5387 .
High Breakdown Voltage- : VCBO= 1200V (Min). High Switching Speed. Low Saturation Voltage. 100% avalanche tested. Minimum Lot-to-.

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Datasheet Specifications

Part number
2SC5387
Manufacturer
Inchange
File Size
181.30 KB
Datasheet
2SC5387_Inchange.pdf
Description
Silicon NPN Power Transistor

Applications

* Horizontal deflection output for high resolution display, color TV.
* High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Co

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Silicon NPN Power Transistor Inchange
Inchange 2SC5387-like datasheet