Datasheet Details
- Part number
- 2SC3357
- Manufacturer
- GME
- File Size
- 213.80 KB
- Datasheet
- 2SC3357-GME.pdf
- Description
- NPN Silicon Transistor
2SC3357 Description
Production specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357 .
2SC3357 Features
* Pb
z Low Noise and High Gain
Lead-free
NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V,
z Large PT in Small Package
PT : 2 W with 16 cm2
2SC3357 Applications
* z The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band. z It has large dynamic range and good current characteristic. ORDERING INFORMATION
Type No. Marking
2SC3357
RH/RF/RE
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise sp
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