2SC3357 NPN Silicon Transistor

GME

Description

Production specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357 .

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Datasheet Specifications

Part number: 2SC3357
Manufacturer: GME
File Size: 213.80 KB
Datasheet: 2SC3357-GME.pdf
Description: NPN Silicon Transistor

Features

* Pb z Low Noise and High Gain Lead-free NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, z Large PT in Small Package PT : 2 W with 16 cm2

Applications

* z The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band. z It has large dynamic range and good current characteristic. ORDERING INFORMATION Type No. Marking 2SC3357 RH/RF/RE Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise sp

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2SC3357 NPN Silicon Transistor GME

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