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BL2301

P-Channel Enhancement Mode Field Effect Transistor

BL2301 Features

* z RDS(ON)≤110mΩ@VGS=-4.5V. Pb z RDS(ON)≤150mΩ@VGS=-2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). APPLICATIONS z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING INFORMATION SOT-23 Type No. BL2301

BL2301 Datasheet (380.83 KB)

Preview of BL2301 PDF

Datasheet Details

Part number:

BL2301

Manufacturer:

GME

File Size:

380.83 KB

Description:

P-channel enhancement mode field effect transistor.

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BL2301 P-Channel Enhancement Mode Field Effect Transistor GME

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