Datasheet4U.com

BL2302 - N-Channel Enhancement Mode Field Effect Transistor

GME

📥 Download Datasheet

BL2302 Datasheet Preview — Preview of BL2302 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	BL2302
Manufacturer	GME
File Size	211.80 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	BL2302-GME.pdf

BL2302 Product details

Features

z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb z 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability.

📁 BL2302 Similar Datasheet

BL2348 - GPON Processor (Broadlight)
BL2000 - UIT BL2000 Hardware installation and maintenance guide (UIT)
BL2002A - Display (Bolymin)
BL2002A1 - DISPLAY (Bolymin)
BL2002AW - DISPLAY (Bolymin)
BL2002B - Display (Bolymin)
BL2004A - PLED (Bolymin)
BL2004A1 - DISPLAY (Bolymin)

Other Datasheets by GME

BL2300 - N-Channel Power Mosfet
BL2301 - P-Channel Enhancement Mode Field Effect Transistor
BL2301W - P-Channel Enhancement MOSFET
BL2303 - P-Channel Power Mosfet
BL2304 - N-Channel Power Mosfet
BL2305 - P-Channel Power Mosfet

Published: Apr 13, 2015 |