G170P03
Description
The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l Ro HS pliant
-30V -20A < 15mΩ < 21mΩ
Application l Power switch l DC/DC converters
Schematic diagram pin assignment
Ordering Information
Device G170P03D3
Package DFN3- 3-8L
Marking G170P03
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range
(note1) （note2）
VDS ID IDM VGS PD EAS TJ, Tstg
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Ambient Maximum Junction-to-Case
Symbol Rth JA Rth JC
.gofordsemi.
TEL：0755-29961263
DFN3- 3-8L
Packaging 5000pcs/Reel
Value
Unit
-30
-20
-...
