GT090N06D52 N-Channel Enhancement Mode Power MOSFET

Description

GOFORD N-Channel Enhancement Mode Power MOSFET GT090N06D52 .
The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Specifications

Part number: GT090N06D52
Manufacturer: GOFORD
File Size: 690.72 KB
Datasheet: GT090N06D52-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

GT090N06D52 Distributors

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GT090N06D52 N-Channel Enhancement Mode Power MOSFET GOFORD

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