Datasheet4U Logo Datasheet4U.com

GT090N06D52 N-Channel Enhancement Mode Power MOSFET

📥 Download Datasheet Datasheet Preview Page 1

Description

GOFORD N-Channel Enhancement Mode Power MOSFET GT090N06D52 .
The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

📥 Download Datasheet

Preview of GT090N06D52 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
GT090N06D52
Manufacturer
GOFORD
File Size
690.72 KB
Datasheet
GT090N06D52-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

GT090N06D52 Distributors

📁 Related Datasheet

  • GT0001 - 1000 Base CX Transformer Modules (BESTJOB)
  • GT0002 - 1000 Base CX Transformer Modules (BESTJOB)
  • GT02F16 - High Voltage Silicon Rectifier Diode (HVGT)
  • GT04 - Gate Drive Transformer (ice Components)
  • GT04-111 - Gate Drive Transformer (ice Components)
  • GT04-122 - Gate Drive Transformer (ice Components)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD GT090N06D52-like datasheet