Description
Main Product Characteristics 2N7002KB 60V N-Channel MOSFET VDSS 60V RDS(on) 2Ω(max.) ID 0.3A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
Features
* SOT-23
Marking and Pin Assignment
Schematic Diagram
* Advanced MOSFET process technology
Applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* ESD Rating:1000V HBM
* 150℃ operating temperature