GSBF620
GOOD-ARK
793.05kb
Npn transistor.
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GSB0520SD - Schottky Diode
(GOOD-ARK)
Features
■ Low forward voltage drop ■ High conductance ■ Guard ring construction for transient protection
GSB0520SD Schottky Diode
Package: SOD-523
.
GSB1132 - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
G S B 11 3 2
The GSB1132 is a epitaxial
1/3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R
Description
planar type PNP silico.
GSB1386 - PNP EPITAXIAL SILICON TRANSISTOR
(GTM)
1/3
GSB1386 PNP EPITAXIAL SILICON TRANSISTOR
Description
The GSB1386 is a epitaxial planar type PNP silicon transistor .
Features
*Low VCE(sat). VCE(s.
GSB1694 - PNP EPITAXIAL TRANSISTOR
(GTM)
..
ISSUED DATE :2006/01/18 REVISED DATE :
GSB1694
Description Package Dimensions
PNP EPITAXIAL T RANSISTOR
The GSB1694 is designed.
GSB649A - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
ISSUED DATE :2003/10/24 REVISED DATE :2004/11/29B
GSB649A
Description Features Package Dimensions
D
P N P E P I TA X I A L P L A.
GSB772S - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
CORPORATION
GSB772S
Description Package Dimensions
D E S1
ISSUED DATE :2004/09/13 REVISED DATE :2004/11/29B
P N P E P I TA X I .
GSB772SS - PNP EPITAXIAL PLANAR TRANSISTOR
(GTM)
..
ISSUED DATE :2005/11/07 REVISED DATE :
GSB772SS
Description
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GSB772SS.
GSBAS16 - SWITCHING DIODE
(GTM)
..
CORPORATION
G SB AS16
Description
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A
ISSUED DATE :2006/12/12 REVISED DATE :
S U R F A .
GSBAS40 - SURFACE MOUNT SCHOTTKY BARRIER DIODE
(GTM)
..
CORPORATION
G SB AS40 t h ru G SB AS40- 06
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2005/12/20 REVISED DATE :
S U.
GSBAS40-04 - SURFACE MOUNT SCHOTTKY BARRIER DIODE
(GTM)
..
CORPORATION
G SB AS40 t h ru G SB AS40- 06
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2005/12/20 REVISED DATE :
S U.
