Description
Main Product Characteristics V(BR)DSS RDS(ON) ID 30V 24mΩ 6.5A .
The SSF3912S utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for MB/VGA/Vcore and load switch
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (TC=25°C) Drain Current
* Continuous (TC=100°C) Drain Current
* Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current