GS8330DW36 (GS8330DW36/72) 36M Double Late Write SRAM

GSI Technology

Description

Preliminary GS8330DW36/72C-250/200 209-Bump BGA Commercial Temp Industrial Temp 36Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM™ 200 MHz *250.
Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock.

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Datasheet Specifications

Part number: GS8330DW36
Manufacturer: GSI Technology
File Size: 632.01 KB
Datasheet: GS8330DW36_GSITechnology.pdf
Description: (GS8330DW36/72) 36M Double Late Write SRAM

Features

* Double Late Write mode, Pipelined Read mode
* JEDEC-standard SigmaRAM™ pinout and package
* 1.8 V +150/
* 100 mV core power supply
* 1.8 V CMOS Interface
* ZQ controlled user-selectable output drive strength
* Dual Cycle Deselect
* Burs

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GS8330DW36 GS8330DW36 36M Double Late Write SRAM GSI Technology

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