G1332E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

G1332E Datasheet Preview — Preview of G1332E PDF

Datasheet Details

Part number	G1332E
Manufacturer	GTM
File Size	289.21 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	G1332E_GTM.pdf

G1332E Product details

Description

The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Simple Gate Drive Small Package Outline 2KV ESD Rating (Per MIL-STD-883D)

Features

Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM.

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Published: Sep 17, 2007 |