G1332E Datasheet - GTM

G1332E, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C G1332E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS .
The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Simple Gate Drive. Small.

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Datasheet Details

Part number:

G1332E

Manufacturer:

GTM

File Size:

289.21 KB

Description:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dra

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

G1332E Distributors

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