G2U09N70 Datasheet (GTM) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

G2U09N70, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : G2U09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/700V RDS(ON) 0.75 ID 9A The G2U09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.

TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.

G2U09N70 Features

* Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre