Datasheet Specifications
- Part number
- G2U09N70
- Manufacturer
- GTM
- File Size
- 336.72 KB
- Datasheet
- G2U09N70_GTM.pdf
- Description
- N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : G2U09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/7.
Features
* Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurreApplications
* TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-262 package is universally preferred for all commercial-industrial applications. The device is suiteG2U09N70 Distributors
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