G2U4407 Datasheet (GTM) - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

G2U4407, P-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/07/05 REVISED DATE : G2U4407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 14m -50A The G2U4407 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-262 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Simple Drive Requirement

G2U4407 Features

* Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre