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GE60T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE60T03 Description

Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GE60T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12m 45A Descri.
The GE60T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

GE60T03 Features

* Low Gate Charge
* Simple Drive Requirement
* Fast Switching Speed
* RoHS Compliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.

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Datasheet Details

Part number
GE60T03
Manufacturer
GTM
File Size
245.73 KB
Datasheet
GE60T03_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
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