* Low Gate Charge
* Simple Drive Requirement
* Fast Switching Speed
* RoHS Compliant Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.
GE60T03
GTM
245.73 KB
N-channel enhancement mode power mosfet.
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GE60T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 12m
45A
Descri.
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