Datasheet Details
- Part number
- GE630
- Manufacturer
- GTM
- File Size
- 326.18 KB
- Datasheet
- GE630_GTM.pdf
- Description
- N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE630 Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/24 REVISED DATE : GE630 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID .
Features
Package Dimensions
REF.
GE630 Features
* Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source
GE630 Applications
* at power dissipation level to approximately 50 watts. The through-hole version is available for low-profile applications.
* Dynamic dv/dt Rating
* Repetitive Avalanche Rated
* Simple Drive Requirement
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