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GE630 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE630 Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/24 REVISED DATE : GE630 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID .
Features Package Dimensions REF.

GE630 Features

* Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source

GE630 Applications

* at power dissipation level to approximately 50 watts. The through-hole version is available for low-profile applications.
* Dynamic dv/dt Rating
* Repetitive Avalanche Rated
* Simple Drive Requirement

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Datasheet Details

Part number
GE630
Manufacturer
GTM
File Size
326.18 KB
Datasheet
GE630_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM GE630-like datasheet