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GE60L02 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE60L02 Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B GE60L02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.
Features. Simple Drive Requirement. Low Gate Charge. Fast Switching Package Dimensions REF.

GE60L02 Features

* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2

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Datasheet Details

Part number
GE60L02
Manufacturer
GTM
File Size
279.47 KB
Datasheet
GE60L02_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
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