GI01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/19 REVISED DATE : GI01L60 .
Features N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A The GI01L60 (through-hole version) is available for low-profile appli.

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Datasheet Specifications

Part number: GI01L60
Manufacturer: GTM
File Size: 306.50 KB
Datasheet: GI01L60_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for AC/DC converters.
* Repetitive Avalanche Rated
* Simple Drive Requirement
* Fast Switching Speed
* RoHS Compliant Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Mi

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📁 Related Datasheet

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GI01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GI01L60-like datasheet